Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
نویسندگان
چکیده
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.
منابع مشابه
- m at . m es - h al l ] 2 4 A pr 1 99 7 Critical Behavior of Nuclear - Spin Diffusion in GaAs / AlGaAs Heterostructures near Landau Level Filling ν = 1
Thermal measurements on a GaAs/AlGaAs heterostructure reveal that the state of the confined two-dimensional electrons dramatically affects the nuclear-spin diffusion near Landau level filling factor ν=1. The experiments provide quantitative evidence that the sharp peak in the temperature dependence of heat capacity near ν=1 is due to an enhanced nuclear-spin diffusion from the GaAs quantum well...
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